rej03g1545-0100 rev.1.00 may 10, 2007 page 1 of 6 rjk5012dpp silicon n channel mos fet high speed power switching rej03g1545-0100 rev.1.00 may 10, 2007 features ? low on-resistance ? low leakage current ? high speed switching outline renesas package code: prss0003ab-a (package name: to-220fn) 1 2 3 d s g 1. gate 2. drain 3. source absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v drain current i d note4 12 a drain peak current i d (pulse) note1 24 a body-drain diode reverse drain current i dr 12 a body-drain diode reverse drain peak current i dr (pulse) note1 24 a avalanche current i ap note3 4 a avalanche energy e ar note3 0.88 mj channel dissipation pch note2 30 w channel to case thermal impedance ch-c 4.17 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c 4. limited by maximum safe operation area
rjk5012dpp rej03g1545-0100 rev.1.00 may 10, 2007 page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 500 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 500 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 0.515 0.620 ? i d = 6 a, v gs = 10 v note5 input capacitance ciss ? 1100 ? pf output capacitance coss ? 120 ? pf reverse transfer capacitance crss ? 15 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 30 ? ns rise time t r ? 23 ? ns turn-off delay time t d(off) ? 77 ? ns fall time t f ? 16 ? ns i d = 6 a v gs = 10 v r l = 41.6 ? rg = 10 ? total gate charge qg ? 29 ? nc gate to source charge qgs ? 5.5 ? nc gate to drain charge qgd ? 13 ? nc v dd = 400 v v gs = 10 v i d = 12 a body-drain diode forward voltage v df ? 0.89 1.50 v i f = 12 a, v gs = 0 note5 body-drain diode reverse recovery time t rr ? 280 ? ns i f = 12 a, v gs = 0 di f /dt = 100 a/ s notes: 5. pulse test
rjk5012dpp rej03g1545-0100 rev.1.00 may 10, 2007 page 3 of 6 main characteristics 80 60 40 20 0 50 100 150 200 20 16 12 8 4 0 4 8 12 16 20 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 1 30 100 3 10 300 1000 0.2 0.1 0.05 1 0.5 0.02 0.01 drain current i d (a) drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. drain current v gs = 10 v pulse test 10 1 110 1000 0.01 0.1 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 2.0 1.6 1.2 0.8 0.4 ? 25 0 25 50 75 100 125 150 0 case temperature tc ( c) static drain to source on state resistance r ds(on) ( ? ) static drain to source on state resistance vs. temperature 02 46810 20 50 10 1 2 5 0.2 0.5 0.1 100 v ds = 10 v pulse test tc = 75 c 25 c ? 25 c 0.001 0.1 pulse test 6 v 7 v 5.8 v 5.2 v 5.4 v 5.6 v v gs = 5 v 10 v ta = 25 c 10 s 100 s 1 ms operation in this area is limited by r ds(on) pw = 10 ms (1shot) dc operation (tc = 25 c) v gs = 10 v pulse test i d = 12 a 6 a 3 a
rjk5012dpp rej03g1545-0100 rev.1.00 may 10, 2007 page 4 of 6 1 3 10 30 100 300 1000 1000 200 500 100 20 50 10 2 5 1 0 100 200 300 3000 1000 10000 100 300 800 0 16 600 12 400 8 200 4 816243240 0 30 10 3 1 v gs = 0 f = 1 mhz ciss coss crss reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics di / dt = 100 a / s v gs = 0, ta = 25 c 0 0.4 0.8 1.2 1.6 2.0 20 8 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) 5 4 3 2 1 -25 0 50 100 150 25 125 75 0 case temperature tc ( c) gate to source cutoff voltage vs. case temperature gate to source cutoff voltage v gs(off) (v) v ds = 10 v i d = 10 ma 1 ma 0.1 ma 4 12 16 i d = 12 a v ds v gs v dd = 100 v 250 v 400 v v dd = 400 v 250 v 100 v pulse test v gs = 0 v, ? 5 v 5 v 10 v
rjk5012dpp rej03g1545-0100 rev.1.00 may 10, 2007 page 5 of 6 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit waveform 10 1 0.1 0.001 0.01 10 100 1 m 10 m 100 m 1 10 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin 10 v r l v dd = 250 v vout monitor 10 ? t c = 25 c 0.02 0.1 0.5 0.05 0.01 0.2 d = 1 1 shot pulse ch?c(t) = s (t) ? ch?c ch?c = 4.17 c/w, t c = 25 c p dm pw t d = t pw
rjk5012dpp rej03g1545-0100 rev.1.00 may 10, 2007 page 6 of 6 package dimensions ? 2.0g mass[typ.] ? prss0003ab-a renesas code jeita package code previous code unit: mm 3.2 0.2 2.8 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 10 0.3 1.1 0.2 6.5 0.3 3 0.3 3.6 0.3 15 0.3 14 0.5 1.1 0.2 4.5 0.2 2.6 0.2 package name to-220fn ordering information part no. quantity shipping container RJK5012DPP-00-T2 1050 pcs box (tube)
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